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alaabta

IPD068P03L3G Qalabka Elektaroonigga ah ee asalka ah IC chip MCU BOM ee kaydka IPD068P03L3G

sharaxaad gaaban:


Faahfaahinta Alaabta

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Sifooyinka Alaabta

NOOCA SHARAXA
Qaybta Alaabta Semiconductor Discrete

Transistor-ka-FET-yada, MOSFET-yada- Keliya

Mfr Infineon Technologies
Taxane OptiMOS™
Xidhmada Cajalad & Gariir (TR)

Jaran Cajalad (CT)

Digi-Reel®

Xaaladda Alaabta Firfircoon
Nooca FET P-Channel
Farsamada MOSFET (Metal Oxide)
Ku shub ilaa Isha Voltage (Vdss) 30 V
Hadda – Dheecaan joogto ah (Id) @ 25°C 70A (Tc)
Korantada Wad (Max Rds On, Min Rds Shid) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 2V @ 150µA
Kharashka Albaabka (Qg) (Max) @ Vgs 91 nC @ 10 V
Vgs (Max) ±20V
Awood-gelinta (Ciss) (Max) @ Vds 7720 pF @ 15 V
Muuqaalka FET -
Koronto Darida (Max) 100W (Tc)
Heerkulka shaqada -55°C ~ 175°C (TJ)
Nooca Koritaanka Dusha sare
Xidhmada Aaladda Bixiyaha PG-TO252-3
Xidhmada / Kiis TO-252-3, DPak (2 Leads + Tab), SC-63
Lambarka Alaabta Saldhigga IPD068

Dukumentiyada & Warbaahinta

NOOCA kheyraadka XIRIIRKA
Xaashiyaha xogta IPD068P03L3 G
Dukumentiyada Kale ee La Xiriira Tusaha Tirada Qaybta
Alaabta sifaysan Nidaamyada Habaynta Xogta
Xaashida Xogta HTML IPD068P03L3 G
Moodooyinka EDA IPD068P03L3GATMA1 ee ustaad maktabadda

Kala soocida Deegaanka & Dhoofinta

sifada SHARAXA
Xaaladda RoHS ROHS3 Waafaqsan
Heerka Dareenka Qoyaanka (MSL) 1 (aan xadidnayn)
Xaaladda GAAR GAAR Aan Saameyn
ECN DHAGTA99
HTSUS 8541.29.0095

Khayraadka Dheeraadka ah

sifada SHARAXA
Magacyo Kale IPD068P03L3GATMA1DKR

IPD068P03L3GATMA1-ND

SP001127838

IPD068P03L3GATMA1CT

IPD068P03L3GATMA1TR

Xidhmada caadiga ah 2,500

Transistor

transistor waa aqalabka semiconductorloo isticmaali jirayxoojinamabeddelocalaamadaha korontada iyoawood.Transistor-ku waa mid ka mid ah dhismooyinka aasaasiga ah ee casriga ahelektarooniga.[1]Waxay ka kooban tahaywalxaha semiconductor, badiyaa leh ugu yaraan saddexterminalisku xirka wareegga elektarooniga ah.Adanabamahaddalagu dabaqo hal-labo oo ka mid ah terminaalka transistor-ka ayaa koontaroolaya hadda iyada oo loo sii marayo lammaane kale.Sababtoo ah awoodda la kantaroolay (wax soo saarka) waxay ka sarrayn kartaa awoodda kontoroolka (gelinta), transistor-ku wuxuu kordhin karaa calaamadda.Qaar ka mid ah transistor-yada si gaar ah ayaa loo baakadeeyay, laakiin qaar kaloo badan ayaa la helay iyagoo ku dhex jirawareegyada isku dhafan.

Austro-Hungary fiisigiste Julius Edgar Lilienfeldsoo jeediyay fikradda atransistor-saameynta goobta1926-kii, laakiin ma suurtoobin in dhab ahaantii la dhiso qalab shaqaynaya wakhtigaas.[2]Qalabkii ugu horreeyay ee shaqeeya ee la dhiso wuxuu ahaa abarta-xiriirka transistor1947-kii waxaa ikhtiraacay culimo-fiisigisteyaal Maraykan ahJohn BardeeniyoWalter Brattainadigoo hoos shaqaynayaWilliam ShockleyatBell Labs.Saddexdu waxay wadaageen 1956kiiAbaalmarinta Nobel ee Fiisigiskaguulahooda.[3]Nooca ugu badan ee loo isticmaalo transistor-ka waabirta-oxide-semiconductor-saamaynta goobta transistor-ka(MOSFET), oo uu alifayMaxamed AtallaiyoDawon KahngBell Labs sanadkii 1959.[4][5][6]Transistor-yadu waxay wax ka beddeleen saaxadda elaktrooniga, waxayna u gogol xaadhayeen wax yar oo ka jabanidaacadaha,xisaabiyeyaashaiyokombiyuutarada, iyo waxyaabo kale.

Inta badan transistors waxaa laga sameeyaa mid aad saafi ahsilikon, iyo qaar ka mid ahjarmalka, laakiin qaar ka mid ah qalabka kale ee semiconductor ayaa mararka qaarkood la isticmaalaa.Transistor-ku waxa uu lahaan karaa hal nooc oo ka mid ah xajmi-qaade, ku dhex jira transistor-ka saamayn ku leh goobta, ama waxa laga yaabaa in uu leeyahay laba nooc oo xamuul qaadatransistor-ka laba-cirifoodkaqalabka.Marka la barbardhigotuubo faaruq ah, transistors guud ahaan waa ka yar yihiin waxayna u baahan yihiin awood yar si ay ugu shaqeeyaan.Tuubooyinka faakuumka qaarkood ayaa faa'iidooyin ka leh transistor-ka oo ah kuwo aad u sarreeya oo shaqeeya ama koronto shaqeeya oo sarreeya.Noocyo badan oo transistor ah ayaa lagu sameeyay qeexitaanno heersare ah oo ay sameeyeen soosaarayaal badan.


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