BOM Qalabka Elektrooniga ah Darawalka IC Chip IR2103STRPBF

Sifooyinka Alaabta

Dukumentiyada & Warbaahinta

Kala soocida Deegaanka & Dhoofinta

Darawaliinta Albaabka

Dareewalka albaabku waa cod-weyneeye ka aqbala gelinta tamarta yar ee kantaroolaha IC oo soo saarta gelinta wadista-hadda sare ee albaabka transistor-ka awooda sare leh sida IGBT ama MOSFET awood ah.Dareewalada albaabka waxaa lagu bixin karaa mid-chip-ka ah ama sida module discrete ah.Nuxur ahaan, darawalka albaabka wuxuu ka kooban yahay beddele heer ah oo lagu daray cod-weyneeye.Dareewalka iridda IC wuxuu u adeegaa sidii isku xirka u dhexeeya calaamadaha kontoroolka (kontaroolayaasha dhijitaalka ah ama analoogga) iyo furayaasha korantada (IGBTs, MOSFETs, SiC MOSFETs, iyo GaN HEMTs).Xalka darawalka albaabka-isku-dhafka ah wuxuu yareynayaa kakanaanta naqshadeynta, waqtiga horumarinta, biilka alaabta (BOM), iyo booska guddiga iyadoo la wanaajinayo isku halaynta xalalka albaabka-drive ee si taxadar leh loo hirgeliyay.

Taariikhda

Sannadkii 1989kii, Rectifier International (IR) waxay soo bandhigtay alaabtii ugu horreysay ee hal-abuurka HVIC ee hal-abuurka ah, tignoolajiyada isku-dhafan ee korantada sare leh (HVIC) waxay isticmaashaa qaab-dhismeedyo hal-abuurnimo leh oo la aqoonsan yahay oo isku-dhafan laba-cirifoodka, CMOS, iyo aaladaha DMOS ee dambe oo leh koronto-jabka ka sarreeya 700 V iyo 1400 V oo loogu talagalay ku shaqaynta danab dhimista ee 600 V iyo 1200 V.[2]

Isticmaalka tignoolajiyadan HVIC-ga isku-dhafan, labada wareegyada beddelka heerka-voltage-ka sarreeya iyo wareegyada analoogga ah ee hooseeya iyo wareegyada dhijitaalka ah waa la hirgelin karaa.Awood u leh in lagu meeleeyo wareegyada korantada sare (oo ku jira 'ceel' ay sameeyeen giraangiraha polysilicon), kaas oo 'sabbeyn kara' 600 V ama 1200 V, isla silikoon ka fog inta kale ee wareegga korantada yar, dhinaca sare MOSFET-yada awoodda ama IGBT-yada waxay ka jiraan meelo badan oo caan ka ah wareegyada wareegyada khadka-ka-baxsan sida buck, kor u kicinta isku-dhafka ah, buundada nuska ah, buundada buuxda iyo saddex waji.Dareewalada albaabka HVIC ee leh furayaasha sabbaynaya ayaa si fiican ugu habboon dusha sare ee u baahan qaabaynta dhinac-sare, buundada badhkeed, iyo saddex waji.[3]

Ujeedo

In la barbardhigotransistors laba-cirifoodkaMOSFET-yada uma baahna tamar joogto ah, ilaa iyo inta aan la damin ama aan la damin.Iridda-electrode-ka go'doonsan ee MOSFET waxay samaysaa acapacitor(gad capacitor), kaas oo ay tahay in la dalaco ama la saaro mar kasta oo MOSFET la shido ama la damiyo.Maadaama uu transistor-ku u baahan yahay danab albaab gaar ah si uu u shido, capacitor-ka albaabka waa in lagu dalaco ugu yaraan danabka albaabka loo baahan yahay ee transistor-ka lagu shido.Sidoo kale, si loo damiyo transistor-ka, lacagtan waa in la baabi'iyaa, ie capacitor-ka albaabka waa in la sii daayaa.

Marka transistor la shido ama la damiyo, isla markaaba kama beddelanto mid aan shaqaynayn una guurin xaalad qabanaysa;waxaana laga yaabaa inay si ku meel gaadh ah u taageerto danab sare labadaba oo ay qabato xawaare sare.Sidaa darteed, marka albaabka hadda la marsado transistor-ka si uu u beddelo, xaddi kulayl ah ayaa soo baxaya kaas oo, xaaladaha qaarkood, ku filan inuu burburiyo transistor-ka.Sidaa darteed, waxaa lagama maarmaan ah in la ilaaliyo wakhtiga beddelka sida ugu yar ee suurtogalka ah, si loo yareeyoluminta beddelidda[de].Waqtiyada beddelka caadiga ah waxay ku jiraan inta u dhaxaysa microse seconds.Wakhtiga beddelka transistor-ku waxa uu u dhigmaa qaddarkahaddaloo isticmaalo in lagu dallaco albaabka.Sidaa darteed, wareegyada wareejinta ayaa inta badan loo baahan yahay inta u dhaxaysa dhowr boqolmilliamperes, ama xataa inta u dhaxaysaamperes.Danabyada iridda caadiga ah ee qiyaastii 10-15V, dhowrwattsawood ayaa loo baahan karaa si loo kaxeeyo furaha.Marka mawjadaha waaweyn lagu beddelo xawli sare, tusaale ahaanbeddelayaasha DC-ilaa-DCama weynmatoorada korontada, transistor-yo badan ayaa mararka qaarkood la bixiyaa si isbarbar socda, si ay u bixiyaan qulqulka wareejinta iyo wareejinta ku filan.

Calaamadaha beddelka ee transistor-ka waxaa badanaa keena wareegga macquulka ah ama akantaroolka yar, Kaas oo bixisa calaamad wax-soo-saar ah oo caadi ahaan ku kooban dhowr millimperes oo hadda ah.Sidaas awgeed, transistor-ka uu si toos ah u wado calaamadda noocan ahi waxa uu u beddelmi doonaa si tartiib ah, iyada oo ay la mid tahay khasaaraha korontadu sareeyso.Inta lagu jiro wareejinta, capacitor-ka albaabka transistor-ku waxa uu si dhakhso ah u soo jiidi karaa wakhtiga xaadirka ah si ay u keento xad-dhaafka hadda ee wareegga macquulka ah ama microcontroller, taas oo keenta kulayl xad dhaaf ah taas oo keenta dhaawac joogto ah ama xitaa burbur dhamaystiran oo jajab ah.Si aysan taasi u dhicin, darawalka albaabka ayaa la bixiyaa inta u dhaxaysa calaamada soo saarida microcontroller iyo transistor-ka korontada.

Ku dallaca bambooyininta badan waxaa loo isticmaalaa gudahaH-Bridgeswadayaasha dhinaca sare ee albaabka wadista dhinaca sare ee n-channelMOSFET-yada awooddaiyoIGBTs.Qalabkan waxaa loo isticmaalaa sababtoo ah waxqabadkooda wanaagsan, laakiin waxay u baahan yihiin danab kaxaynta albaabka dhawr volts oo ka sarreeya tareenka korontada.Marka bartamaha buundada badhkeed hoos u dhacdo capacitor-ka waxaa lagu dalacaa iyada oo loo marayo diode, iyo kharashkan waxaa loo isticmaalaa in lagu kaxeeyo albaabka dhinaca sare ee FET-ga dhowr volts oo ka sarreeya isha ama tamarta pin ee emitter si loo shido.Istaraatiijiyadani waxay si fiican u shaqeysaa waa haddii buundada si joogto ah loo damiyo oo ay ka fogaato kakanaanta in la isticmaalo sahay koronto oo gaar ah waxayna ogolanaysaa qalabka n-channel ee waxtarka badan in loo isticmaalo shilalka sare iyo kuwa hooseba.