SN74CB3Q3245RGYR 100% Cusub & Asalka DC U Bedesha & Chip Nidaamiyaha Beddelida
Sifooyinka Alaabta
| NOOCA | SHEEG |
| qaybta | Dareeraha ishaarada, multiplexer, codeeye |
| soo saaraha | Qalabka Texas |
| taxane | 74CB |
| duub | Xirmooyinka duubista iyo duubista (TR) Xirmada cajaladda dahaadhka ah (CT) Digi-Reel® |
| Heerka badeecada | Firfircoon |
| nooca | Beddelka baska |
| wareegga | 8 x 1:1 |
| Wareeg madax banaan | 1 |
| Hadda - Wax soo saarka sare, hooseeya | - |
| Isha sahayda korantada | Koronto kali ah |
| Voltage - Korontada | 2.3V ~ 3.6V |
| Heerkulka shaqada | -40°C ~ 85°C |
| Nooca rakibidda | Nooca xabagta dusha sare |
| Xidhmada/Guryaynta | 20-VFQFN suuf qaawan |
| Qaybta iibiyaha | 20-VQFN (3.5x4.5) |
| nambarka sayidka alaabta | 74CB3Q3245 |
Hordhac Product
SN74CB3Q3245 waa furaha baska FET-bandwidth-sare oo isticmaalaya bamka lacag-bixinta si kor loogu qaado danabka albaabka ee transistor-ka, taasoo bixisa iska caabin hoose oo siman ON-state (ron).Iska caabbinta gobolka-hoose iyo fidsan waxay u oggolaanaysaa daahitaanka faafinta ugu yar waxayna taageertaa beddelka tareenka-tareenka ee dekedaha gelinta/soo-saarka xogta (I/O).Qalabku waxa kale oo uu leeyahay xog hoose oo awood I/O ah si loo yareeyo rarista awooda iyo khalkhalka calaamada ee baska xogta.Si gaar ah loogu talagalay in lagu taageero codsiyada-bandwidth-sare, SN74CB3Q3245 waxay bixisaa is-dhexgal la hagaajiyay oo ku habboon isgaarsiinta ballaaran, isku-xirka, iyo nidaamyada xisaabinta xogta-dheer.
SN74CB3Q3245 waxaa loo habeeyay sidii baska 8-bit ah oo leh hal wax-soo-saar awood leh (OE)Marka OE\ hooseeyo, baska shiduhu waa ON, dekedduna waxay ku xidhan tahay dekedda B, taasoo u oggolaanaysa inay xogta laba jiho u kala gooshto dekedaha.Marka OE\ uu sareeyo, baska shisheeyaha waa dansan yahay oo xaalad kacsanaan ah ayaa ka dhex jirta dekedaha A iyo B.
Qalabkan waxaa si buuxda loogu qeexay codsiyada qayb-korontada ah iyadoo la isticmaalayo Ioff.Wareegga Ioff wuxuu ka hortagayaa inuu waxyeeleeyo dib-u-socodka hadda socda ee aaladda marka uu damiyo.Qalabku wuxuu leeyahay go'doon inta lagu jiro korontadu.
Si loo hubiyo in xaalada kacsan tahay inta lagu jiro korontadu ama hoos u dhaceyso, OE waa in lagu xiro VCC iyada oo loo marayo iska caabin jiid;qiimaha ugu yar ee iska caabbinta waxaa lagu go'aamiyaa awoodda hadda- quusta ee darawalka.
Tilmaamaha Alaabta
- Jidka Xogta-Bandwidth-sare (Ilaa 500 MHz↑)
- U dhiganta IDTQS3VH384 Aaladda
- 5-V Dulqaadka I/Os oo leh Aalad Kor-u-qaadday ama Hoos-u-dhac ku yimid
- Iska-caabbinta Gobolka-hoose iyo Banaan (ron) Astaamaha ka sarreeya Xaddiga Hawlgelinta (ron = 4Ω Caadiga ah)
- Tareen-ilaa-Tareen ku beddelashada Xogta I/O Dekadaha Socodka Xogta laba-geesoodka ah, oo ay ku jirto Dib-u-dhac ku dhow-eberAwood wax-soo-saarka/soo-saarka hooseeya waxay yaraynaysaa rarista iyo qallooca isha (Cio(OFF) = 3.5 pF Caadiga ah)
- 0- ilaa 5-V oo ku Bedelaya 3.3-V VCC
- 0- ilaa 3.3-V Ku beddelashada 2.5-VCC
- Inta jeer ee beddelka degdega ah (fOE= 20 MHz Max)
- Xogta iyo Maaraynta Maaraynta waxay bixiyaan Diodes Clamp-ka oo aan is-qabin
- Isticmaalka Awood Hoose (ICC = 1 mA Caadiga ah)
- Qiyaasta Hawlgalka VCC Laga bilaabo 2.3 V ilaa 3.6 V
- Xogta I/Os Taageerada 0 ilaa 5-V Heerarka Calaamadaynta (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
- Wax-soo-saarka xakamaynta waxa wadi kara TTL ama 5-V/3.3-V CMOS Outputs
- Ioff wuxuu taageeraa Habka Qayb-Awood-hoos u shaqaynta
- Waxqabadka Latch-Up wuxuu ka sarreeyaa 100 mA halkii JESD 78, Fasalka II
- Waxqabadka ESD ee lagu tijaabiyay halkii JESD 22 Waxay taageertaa Codsiyada Dijital ah iyo Analog-ba: Interface PCI, Interface Kala Duwan, Xusuusta Dhexgalka, Go'doominta Baska, Calaamadaha Qallooca Hoose
- 2000-V Qaabka Jirka-Aadamiga (A114-B, Fasalka II)
- 1000-V Model-Qalab Dalacay (C101)
Faa'iidooyinka alaabta
- maaraynta kulaylka iyo ilaalinta xad-dhaafka ah
Maareynta kulaylka ayaa ah caqabad kale oo weyn oo haysata naqshadeeyayaasha batteriga.Chip kasta oo dabeyuhu waxa uu la kulmaa hoos u dhac danab ah inta lagu guda jiro habka dallacaadda sababtoo ah kulaylka darida.Si looga fogaado burburka batteriga ama nidaamka daminta, dabaysha badankoodu waxay ku daraan nooc ka mid ah hababka xakamaynta si loo maareeyo kor u kaca kulaylka.Aaladaha cusubi waxay adeegsadaan farsamooyin jawaab celin aad u casrisan si ay si joogto ah ula socdaan heerkulka dhinta oo ay u hagaajiyaan kharashka hadda si firfircoon ama xisaabinta oo u dhiganta isbeddelka heerkulka jawiga.Sirdoonkan ku dhex jira waxa uu u sahlayaa chip charger-ka hadda in uu si tartiib tartiib ah u dhimo ku dallaca hada ilaa la gaadho dheellitirka kulaylka iyo heerkulka dhimashadu joogsanayso kor u kaca.Farsamadani waxay u oggolaanaysaa dallayuhu inuu si joogto ah u dallaco batteriga inta ugu badan ee suurtogalka ah iyada oo aan la keenin in nidaamku damo, sidaas awgeedna hoos u dhigaya wakhtiga batteriga.Inta badan aaladaha cusub maanta waxay sidoo kale caadi ahaan ku dari doonaan habka ilaalinta korontadda.
Dabeyuhu BQ25616JRTWR wuxuu bixiyaa sifooyin badbaado oo kala duwan oo loogu talagalay ku dallaca batteriga iyo hawlgallada nidaamka, oo ay ku jiraan ilaalinta kulaylka isku xidhka heerkulka xun ee baytariga, ku dallacaadaha ammaanka iyo korontadda iyo ilaalinta hadda xad dhaafka ah.Nidaaminta kulaylka waxay yaraynaysaa kharashka hadda socda marka heerkulka isgoysku uu dhaafo 110 ° C.Wax soo saarka STAT ayaa ka warbixiya heerka dallacaadda iyo xaalad kasta oo khalad ah.
Xaaladaha Codsiga
Chip charger batterigu waxa iska leh nooc ka mid ah chip-ka maaraynta korantada, kala duwanaanshaha codsigu aad buu u ballaadhan yahay.Horumarinta chips maamulka awoodda ayaa muhiim u ah hagaajinta waxqabadka mashiinka oo dhan, doorashada chips maamulka awoodda si toos ah ula xiriira baahida nidaamka, halka horumarinta chips maamulka awoodda digital weli u baahan yahay in ay ka gudbaan caqabada kharashka.
BQ25616/616J waa mid si heer sare ah isku dhafan oo 3-A-mode-bedel ah maaraynta kharashka baytari iyo nidaamka maamulka dariiqa awoodda ee hal unug Li-Ion iyo baytariyada Li-polymer.Xalku wuxuu si aad ah ugu dhexjiraa soo-gelinta dib-u-hortagga FET (RBFET, Q1), beddelashada dhinaca sare ee FET (HSFET, Q2), beddelashada dhinaca hoose ee FET (LSFET, Q3), iyo batteriga FET (BATFET, Q4) ee u dhexeeya nidaamka iyo baytari.Dariiqa korantada ee hoose waxay wanaajisaa hufnaanta hawlgalka qaab beddelka, waxay yaraynaysaa wakhtiga ku dallaca batteriga waxayna kordhisaa wakhtiga uu ku shaqaynayo batteriga inta lagu jiro marxaladda daynta.
BQ25616/616J waa mid si heer sare ah isku dhafan oo 3-A-mode-bedel ah maaraynta kharashka baytari iyo nidaamka maaraynta Jidka Awooda baytariyada Li-ion iyo Li-polymer.Waxay ka kooban tahay ku dallaco degdeg ah oo leh taageero koronto sare leh oo loogu talagalay codsiyo badan oo kala duwan oo ay ku jiraan kuwa ku hadla, warshadaha, iyo aaladaha la qaadi karo ee caafimaadka.Jidkeeda awoodda yar ee wax-ka-qabashada waxay wanaajisaa hufnaanta hawlgalka hab beddelka, waxay yaraynaysaa wakhtiga ku dallaca batteriga, waxayna kordhisaa wakhtiga socodsiinta batteriga inta lagu jiro marxaladda daynta.Danabkeeda wax gelinta iyo habaynta hadda waxay keenaysaa awoodda ugu badan ee ku dallaca batteriga.
Xalku wuxuu si aad ah ugu dhexjiraa soo-gelinta dib-u-hortagga FET (RBFET, Q1), beddelashada dhinaca sare ee FET (HSFET, Q2), beddelashada dhinaca hoose ee FET (LSFET, Q3), iyo batteriga FET (BATFET, Q4) ee u dhexeeya nidaamka iyo baytari.Waxa kale oo ay isku xidhaa diodka bootstrap-ka ah ee wadista albaabka dhinaca sare ee naqshadaynta nidaamka la fududeeyay.Dejinta qalabka iyo warbixinta heerka ayaa bixisa qaabayn fudud si loo dejiyo xalka dallacaadda.
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