Wareegga Isku-dhafka Cusub ee Asalka ah BSP772T IP5306 BSZ040N06LS5 TLE7270-2D Chip IC
BSZ040N06LS5
Infineon's OptiMOS™ 5 awood MOSFETs heerka macquulka ah ayaa aad ugu habboon dallacaadda wireless-ka, adabtarada iyo codsiyada isgaarsiinta.Kharashka irridda hoose ee aaladaha (Q g) waxa ay yaraynaysaa khasaaraha beddelka iyada oo aan waxba loo dhimayn khasaaraha korantada.Tirooyinka la wanaajiyey ee mudnaanta ayaa u oggolaanaya hawlgallada isbeddello sarreeya.Intaa waxaa dheer, darawalka heerka macquulka ah wuxuu bixiyaa thres albaab hooseQabo danab (V GS(th)) oo u oggolaanaya MOSFET-yada in lagu kaxeeyo 5V oo si toos ah looga soo qaado microcontrollers.
Soo koobida Tilmaamaha
Low R DS(daran) ee xirmo yar yar
Kharashka albaabka hoose
Kharashka wax soo saarka hoose
waafaqsanaanta heerka macquulka ah
Faa'iidooyinka
Nashqadaha cufnaanta awoodda sare
Inta jeer ee beddelka sare
Qaybaha la dhimay ayaa lagu tiriyaa meel kasta oo sahayda 5V laga helo
Si toos ah loogala socdo kontaroolayaasha yar yar (wareejinta tartiib tartiib ah)
Dhimista kharashka nidaamka
Parametrics
| Parametrics | BSZ040N06LS5 |
| Qiimaha Miisaaniyadda €/1k | 0.56 |
| Ciise | 2400 pF |
| Coss | 500 pF |
| Aqoonsiga (@25°C) ugu badnaan | 101 A |
| IDpuls max | 404 A |
| Koritaanka | SMD |
| Heerkulka shaqaynaya ugu yaraan | -55 °C 150 °C |
| Ptot max | 69 W |
| Xidhmada | PQFN 3.3 x 3.3 |
| Tirada Pin | 8 biinanka |
| Polarity | N |
| QG (ku qor @4.5V) | 18 nC |
| Qgd | 5.3 nC |
| RDS (daran) (@4.5V LL) ugu badnaan | 5.6 mΩ |
| RDS (daran) (@4.5V) ugu badnaan | 5.6 mΩ |
| RDS (daran) (@10V) ugu badnaan | 4 mΩ |
| Rth max | 1.8 K/W |
| RthJA max | 62 K/W |
| RthJC max | 1.8 K/W |
| VDS max | 60 V |
| VGS(t) ugu badnaan | 1.7 V 1.1 V 2.3 V |
