10AX066H3F34E2SG 100% Cusub & Asalka Go'doominta Amplifier 1 Wareegga Kala Duwan 8-SOP
Sifooyinka Alaabta
Midowga Yurub RoHS | waafaqsan |
ECN (US) | 3A001.a.7.b |
Xaaladda Qaybta | Firfircoon |
HTS | 8542.39.00.01 |
Baabuur | No |
PPAP | No |
Magaca qoyska | Arria® 10 GX |
Habka Farsamada | 20nm |
Isticmaalaha I/Os | 492 |
Tirada Diiwangelinta | 1002160 |
Ku shaqaynta korontada (V) | 0.9 |
Waxyaabaha macquulka ah | 660000 |
Tirada Isku-dhufashada | 3356 (18x19) |
Nooca Xusuusta Barnaamijka | SRAM |
Xusuusta ku duugan (Kbit) | 42660 |
Tirada guud ee xannibaadda RAM | 2133 |
Unugyada macquulka ah ee aaladda | 660000 |
Tirada aaladaha DLLs/PLS | 16 |
Kanaalka Transceiver | 24 |
Xawaaraha gudbinta (Gbps) | 17.4 |
DSP u heellan | 1678 |
PCIe | 2 |
Programmability | Haa |
Taageerada dib-u-habaynta | Haa |
Ilaalinta koobi | Haa |
In-System Programmability | Haa |
Heerka Xawaaraha | 3 |
Heerarka I/O-Dhammaadka ah | LVTTL|LVCMOS |
Interface xusuusta dibadda | DDR3 SDRAM|DDR4|LPDDR3|RLDRAM II|RLDRAM III|QDRII+SRAM |
Korontada Supply ee ugu Yar (V) | 0.87 |
Korontada Supply Supply (V) ee ugu badan | 0.93 |
I/O Voltage (V) | 1.2|1.25|1.35|1.5|1.8|2.5|3| |
Heerkulka shaqeynta ugu yar (°C) | 0 |
Heerkulka shaqada ee ugu badan (°C) | 100 |
Heerkulka alaab-qeybiyaha | La dheereeyey |
Magaca ganacsiga | Arria |
Koritaanka | Dusha sare |
Dhererka Xidhmada | 2.63 |
Ballaca Xidhmada | 35 |
Dhererka Xidhmada | 35 |
PCB ayaa isbedelay | 1152 |
Magaca Xidhmada Caadiga ah | BGA |
Xidhmada Alaabta | FC-FBGA |
Tirada Pin | 1152 |
Qaabka rasaasta | Kubad |
Nooca Wareegga Isku-dhafan
Marka la barbar dhigo elektarooniga, photon-yadu ma laha cuf fadhiid ah, is dhexgal daciif ah, awood xoog leh oo ka hortagga faragelinta, waxayna aad ugu habboon yihiin gudbinta macluumaadka.Isku xirka indhaha ayaa la filayaa inuu noqdo tignoolajiyada udub-dhexaadka u ah inay jabiso gidaarka isticmaalka tamarta, gidaarka kaydinta iyo gidaarka isgaarsiinta.Iftiiminta, lammaane, modulator, aaladaha waveguide ayaa lagu dhex daray astaamaha cufnaanta sare ee indhaha sida nidaamka micro-electric isku-dhafan, waxay xaqiijin karaan tayada, mugga, isticmaalka awoodda is-dhexgalka sawir-qaadista cufnaanta sare, madal is-dhexgalka sawir-qaadista oo ay ku jiraan III - V-ka kooban semiconductor monolithic (INP) ) madal is dhexgalka dadban, silicate ama galaas (planar waveguide, PLC) iyo madal silikoon ku salaysan.
Madal InP waxaa inta badan loo isticmaalaa soo saarista laser, modulator, detector iyo aaladaha kale ee firfircoon, heerka tignoolajiyada hoose, qiimaha substrate sare;Isticmaalka madal PLC si loo soo saaro qaybo dadban, khasaaro yar, mug weyn;Dhibaatada ugu weyn ee labada gooboodba waa in alaabtu aysan ku habboonayn qalabka elektarooniga ah ee silicon-ku salaysan.Faa'iidada ugu caansan ee is-dhexgalka photonic-ku-saleysan ee silikoon waa in geeddi-socodku uu la jaan-qaadi karo habka CMOS iyo kharashka wax-soo-saarku waa mid hooseeya, sidaas darteed waxaa loo tixgeliyaa inuu yahay habka ugu macquulsan ee optoelectronic iyo xitaa dhammaan nidaamka is-dhexgalka indhaha.
Waxaa jira laba hab oo isdhexgalka oo loogu talagalay aaladaha sawir-qaadista ee silikoon ku saleysan iyo wareegyada CMOS.
Faa'iidada tan hore ayaa ah in aaladaha sawir-qaadista iyo aaladaha elektiroonigga ah si gaar ah loo hagaajin karo, laakiin xirmooyinka xiga waa adag tahay codsiyada ganacsiguna waa xaddidan yihiin.Tan dambe way adag tahay in la qaabeeyo oo la farsameeyo isku dhafka labada qalab.Waqtigan xaadirka ah, isku-dhafka isku-dhafka ah ee ku salaysan is-dhexgalka walxaha nukliyeerka ayaa ah doorashada ugu fiican